CS6N70FB9D Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS6N70FB9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS6N70FB9D General Description

CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 6 35 1.4 the avalanche energy. The transistor can be used in various power switc.

CS6N70FB9D Datasheet (360.98 KB)

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Part number:

CS6N70FB9D

Manufacturer:

Huajing Microelectronics

File Size:

360.98 KB

Description:

Silicon n-channel power mosfet.

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CS6N70FB9D Features

CS6N70FB9D General Description

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