CS6N70FB9D - Silicon N-Channel Power MOSFET
CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 700 6 35 1.4 the avalanche energy.
The transistor can be used in various power switc
CS6N70FB9D Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter
