H55S1262EFP-60M Datasheet, I/O, Hynix Semiconductor

H55S1262EFP-60M Features

  • I/o
  • Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Int

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Part number:

H55S1262EFP-60M

Manufacturer:

Hynix Semiconductor

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796.95kb

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📄 Datasheet

Description:

128mbit mobile sdr sdrams based on 2m x 4bank x16 i/o. and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses a

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H55S1262EFP-60M Application

  • Applications which requires large memory density and high bandwidth. It is organized as 4banks of 2,097,152x16. Mobile SDRAM is a type of DRAM which

TAGS

H55S1262EFP-60M
128MBit
MOBILE
SDR
SDRAMs
based
4Bank
x16
Hynix Semiconductor

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