and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
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Rev 1.2 /Aug.
2009 1 11 128Mbit (8Mx16bit) Mobile SDR Memory H55S1262EFP Series www.DataSheet4U.com Document Title 4Bank x 2M x 16bits Synchronous DRAM
H55S1262EFP-75M Features
* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During b
H55S1262EFP-60E_HynixSemiconductor.pdf
Datasheet Details
H55S1262EFP-75M, H55S1262EFP-60E
Hynix Semiconductor
796.95 KB
128mbit mobile sdr sdrams based on 2m x 4bank x16 i/o.
This datasheet PDF includes multiple part numbers: H55S1262EFP-75M, H55S1262EFP-60E.
Please refer to the document for exact specifications by model.
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