HY51VS17403HG Datasheet - Hynix Semiconductor

HY51VS17403HG, 4M x 4Bit EDO DRAM

HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY .
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.

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Datasheet Details

Part number:

HY51VS17403HG

Manufacturer:

Hynix Semiconductor

File Size:

96.42 KB

Description:

4M x 4Bit EDO DRAM

Features

* include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. FEATURES
* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability

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HY51VS17403HG 4Bit EDO DRAM Hynix Semiconductor

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