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HY51VS65163HG Datasheet - Hynix Semiconductor

HY51VS65163HG, 4M x 16Bit EDO DRAM

HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY .
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs.
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HY51VS65163HG_HynixSemiconductor.pdf

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Datasheet Details

Part number:

HY51VS65163HG

Manufacturer:

Hynix Semiconductor

File Size:

96.60 KB

Description:

4M x 16Bit EDO DRAM

Features

* are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability FEATURES

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