HY5DU28422AT, HY5DU28822AT 3rd 128M DDR SDRAM

Hynix Semiconductor

HY5DU28422AT Description

HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T 3rd 128M DDR SDRAM HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T This document is a general prod.
and is subject to change without notice.

HY5DU28422AT Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe

HY5DU28422AT Applications

* which requires large memory density and high bandwidth. The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data stro

📥 Download Datasheet

HY5DU28422AT Datasheet Preview — This datasheet PDF includes multiple part numbers: HY5DU28422AT, HY5DU28822AT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY5DU28422AT, HY5DU28822AT
Manufacturer: Hynix Semiconductor
File Size: 376.76 KB
Datasheet: HY5DU28822AT_HynixSemiconductor.pdf
Description: 3rd 128M DDR SDRAM
Note: This datasheet PDF includes multiple part numbers: HY5DU28422AT, HY5DU28822AT.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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HY5DU281622LT-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622LT-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622LT-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

📌 All Tags

3rd 128M DDR SDRAM Hynix Semiconductor

Hynix Semiconductor HY5DU28422AT-like datasheet

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HY5DU281622AT - (HY5DU28xxxAT) 3rd 128M DDR SDRAM
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