HY5DU28422T 2nd 128M DDR SDRAM

Hynix Semiconductor

HY5DU28422T Description

HY5DU28422T HY5DU28822T HY5DU281622T 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 Rev.1.3 / Apr.2001 This doc.
and is subject to change without notice.

HY5DU28422T Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional da

HY5DU28422T Applications

* which requires large memory density and high bandwidth. The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data stro

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Datasheet Details

Part number: HY5DU28422T
Manufacturer: Hynix Semiconductor
File Size: 1.54 MB
Datasheet: HY5DU28422T-HynixSemiconductor.pdf
Description: 2nd 128M DDR SDRAM

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2nd 128M DDR SDRAM Hynix Semiconductor

Hynix Semiconductor HY5DU28422T-like datasheet

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