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HY5DU561622ETP, HY5DU56822E Datasheet - Hynix Semiconductor

HY5DU561622ETP, HY5DU56822E, (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

www.DataSheet4U.com 256Mb DDR SDRAM HY5DU56822E(L)TP HY5DU561622E(L)TP This document is a general product .
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HY5DU56822E_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY5DU561622ETP, HY5DU56822E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HY5DU561622ETP, HY5DU56822E

Manufacturer:

Hynix Semiconductor

File Size:

292.14 KB

Description:

(HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

Note:

This datasheet PDF includes multiple part numbers: HY5DU561622ETP, HY5DU56822E.
Please refer to the document for exact specifications by model.

Features

* VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface So

Applications

* which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

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