HY5DU561822ETP, HY5DU56822E (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

Hynix Semiconductor

HY5DU561822ETP Description

www.DataSheet4U.com 256Mb DDR SDRAM HY5DU56822E(L)TP HY5DU561622E(L)TP This document is a general product .
and is subject to change without notice.

HY5DU561822ETP Features

* VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface So

HY5DU561822ETP Applications

* which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

📥 Download Datasheet

HY5DU561822ETP Datasheet Preview — This datasheet PDF includes multiple part numbers: HY5DU561822ETP, HY5DU56822E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY5DU561822ETP, HY5DU56822E
Manufacturer: Hynix Semiconductor
File Size: 292.14 KB
Datasheet: HY5DU56822E_HynixSemiconductor.pdf
Description: (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
Note: This datasheet PDF includes multiple part numbers: HY5DU561822ETP, HY5DU56822E.
Please refer to the document for exact specifications by model.

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📌 All Tags

HY5DU56822E HY5DU561622E 256Mb DDR SDRAM Hynix Semiconductor

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