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2N5885 NPN Transistor

2N5885 Description

isc Silicon NPN Power Transistors .
Low Collector Saturation Voltage- : VCE(sat)= 1. DC Current Gain- : hFE= 20- @IC= 10A. 100% avalanche tested. Minim.

2N5885 Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM

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Datasheet Details

Part number
2N5885
Manufacturer
INCHANGE
File Size
183.76 KB
Datasheet
2N5885-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2N5885-like datasheet