2N5885 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Low Collector Saturation Voltage- : VCE(sat)= 1. DC Current Gain- : hFE= 20- @IC= 10A. 100% avalanche tested. Minim.

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Datasheet Specifications

Part number: 2N5885
Manufacturer: INCHANGE
File Size: 183.76 KB
Datasheet: 2N5885-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM

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2N5885 NPN Transistor INCHANGE

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