2SB1022 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlingtion Power Transistor 2SB1022 .
High DC C urrent Gain- : hFE= 2000(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Good Linearity of hFE.

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Datasheet Specifications

Part number: 2SB1022
Manufacturer: INCHANGE
File Size: 209.93 KB
Datasheet: 2SB1022-INCHANGE.pdf
Description: PNP Transistor

Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Contin

2SB1022 Distributors

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2SB1022 PNP Transistor INCHANGE

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