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2SB1022 PNP Transistor

2SB1022 Description

isc Silicon PNP Darlingtion Power Transistor 2SB1022 .
High DC C urrent Gain- : hFE= 2000(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Good Linearity of hFE.

2SB1022 Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Contin

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Datasheet Details

Part number
2SB1022
Manufacturer
INCHANGE
File Size
209.93 KB
Datasheet
2SB1022-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1022-like datasheet