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2SB1032 PNP Transistor

2SB1032 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A. Collector-Emitter Sustaining Voltage- : = V(BR)CEO -120V(Min). Complement to Type 2SD14.

2SB1032 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector

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Datasheet Details

Part number
2SB1032
Manufacturer
INCHANGE
File Size
190.31 KB
Datasheet
2SB1032-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1032-like datasheet