2SB1032 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SB1032 PNP Transistor

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A. Collector-Emitter Sustaining Voltage- : = V(BR)CEO -120V(Min). Complement to Type 2SD14.

2SB1032-INCHANGE.pdf

2SB1032 Datasheet Preview — Preview of 2SB1032 PDF

Datasheet Details

Part number:

2SB1032

Manufacturer:

INCHANGE

File Size:

190.31 KB

Description:

PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector

2SB1032 Distributors

📁 Related Datasheet

2SB1030 2SB1030A 2SB1031 2SB1031K 2SB1033 2SB1034

📌 All Tags

2SB1032 PNP Transistor INCHANGE

INCHANGE 2SB1032-like datasheet