Datasheet4U Logo Datasheet4U.com

2SB1161 PNP Transistor

2SB1161 Description

isc Silicon PNP Power Transistor 2SB1161 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

2SB1161 Applications

* Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Collector Current-

📥 Download Datasheet

Preview of 2SB1161 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1161
Manufacturer
INCHANGE
File Size
218.95 KB
Datasheet
2SB1161-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1160 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1162 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1163 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1165 - PNP Transistor (Sanyo Semicon Device)
  • 2SB1166 - PNP Transistor (Sanyo Semicon Device)
  • 2SB1167 - PNP Transistor (Sanyo Semicon Device)
  • 2SB1168 - PNP Transistor (Sanyo Semicon Device)
  • 2SB1169 - Power Transistors (Panasonic)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1161-like datasheet