Datasheet Details
| Part number | 2SB1161 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 218.95 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB1161-INCHANGE.pdf
|
| Part number | 2SB1161 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 218.95 KB |
| Description | PNP Transistor |
| Datasheet |
2SB1161-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD1716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Col
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