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2SB1190 Datasheet - INCHANGE

2SB1190 PNP Transistor

*High Power Dissipation *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) *Complement to Type 2SD1770 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier applications. *TV vertical deflection outpu.

2SB1190-INCHANGE.pdf

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Datasheet Details

Part number:

2SB1190

Manufacturer:

INCHANGE

File Size:

212.35 KB

Description:

Pnp transistor.

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