2SB1190 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Complement to Type 2SD1770. Minimum Lot-to.

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Datasheet Specifications

Part number: 2SB1190
Manufacturer: INCHANGE
File Size: 212.35 KB
Datasheet: 2SB1190-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications.
* TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -

2SB1190 Distributors

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2SB1190 PNP Transistor INCHANGE

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