2SB1194 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB1194 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min). High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A). Complement to.

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Datasheet Specifications

Part number: 2SB1194
Manufacturer: INCHANGE
File Size: 214.30 KB
Datasheet: 2SB1194-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak

2SB1194 Distributors

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2SB1194 PNP Transistor INCHANGE

INCHANGE 2SB1194-like datasheet