2SB1194 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SB1194

Manufacturer:

INCHANGE

File Size:

214.30kb

Download:

📄 Datasheet

Description:

Pnp transistor.

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min)

High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC

2SB1194 Application

• Applications
• Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

TAGS

2SB1194

INCHANGE

📁 Related Datasheet

2SB1190 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION ·With TO-220 package ·High VCEO.

2SB1190 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement t.

2SB1192 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION ·With TO-220Fa package ·High VC.

2SB1192 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor 2SB1192 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Com.

2SB1193 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION ·With TO-220Fa package ·High DC.

2SB1193 - Silicon PNP Transistor (Panasonic)
Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm • High forward current transfer ratio hFE • High-speed switching • F.

2SB1193 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= .

2SB1194 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION ·With TO-220Fa package ·High DC.

2SB1197 - PNP Transistor (WEITRON)
2SB1197 PNP General Purpose Transistors P b Lead(Pb)-Free Features: * High current capacity in pact package. * Epitaxial planar type. * We declare.

2SB1197 - Silicon Epitaxial Planar Transistor (GME)
Production specification Silicon Epitaxial Planar Transistor FEATURES z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead.