Datasheet4U Logo Datasheet4U.com

2SB531 PNP Transistor

2SB531 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Power Dissipation- : PC= 50W(Max)@TC=25℃. Complement to Type 2SD371.

2SB531 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IE Emitter Current-Continuo

📥 Download Datasheet

Preview of 2SB531 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB531
Manufacturer
INCHANGE
File Size
208.13 KB
Datasheet
2SB531-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB537 - SILICON POWER TRANSISTOR (NEC)
  • 2SB539A - NPN/PNP Silicon Transistor (ETC)
  • 2SB539B - NPN/PNP Silicon Transistor (ETC)
  • 2SB539C - NPN/PNP Silicon Transistor (ETC)
  • 2SB502A - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB503A - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB506 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB507 - Silicon PNP Power Transistors (SavantIC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB531-like datasheet