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2SB532 PNP Transistor

2SB532 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High Power Dissipation- : PC= 60W(Max)@TC=25℃. Minimum Lot-to-Lot variations.

2SB532 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25

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Datasheet Details

Part number
2SB532
Manufacturer
INCHANGE
File Size
203.53 KB
Datasheet
2SB532-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB532-like datasheet