2SB536 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors 2SB536 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Complement to Type 2SD381. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SB536
Manufacturer: INCHANGE
File Size: 201.50 KB
Datasheet: 2SB536-INCHANGE.pdf
Description: PNP Transistor

Applications

* Audio frequency power amplifier, low speed switching.
* Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

2SB536 Distributors

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2SB536 PNP Transistor INCHANGE

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