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2SB536 PNP Transistor

2SB536 Description

isc Silicon PNP Power Transistors 2SB536 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Complement to Type 2SD381. Minimum Lot-to-Lot variations for robust device.

2SB536 Applications

* Audio frequency power amplifier, low speed switching.
* Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

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Datasheet Details

Part number
2SB536
Manufacturer
INCHANGE
File Size
201.50 KB
Datasheet
2SB536-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB536-like datasheet