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2SB552 PNP Transistor

2SB552 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. Complement to Type 2SD552.

2SB552 Applications

* High power amplifier applications.
* High power switching applications.
* DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -220 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Volt

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Datasheet Details

Part number
2SB552
Manufacturer
INCHANGE
File Size
208.52 KB
Datasheet
2SB552-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB552-like datasheet