2SB552 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. Complement to Type 2SD552.

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Datasheet Specifications

Part number: 2SB552
Manufacturer: INCHANGE
File Size: 208.52 KB
Datasheet: 2SB552-INCHANGE.pdf
Description: PNP Transistor

Applications

* High power amplifier applications.
* High power switching applications.
* DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -220 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Volt

2SB552 Distributors

📁 Related Datasheet

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2SB552 PNP Transistor INCHANGE

INCHANGE 2SB552-like datasheet