2SB552 Datasheet - INCHANGE

2SB552, PNP Transistor

isc Silicon PNP Power Transistors DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) *High Power Dissipation- : PC= 150

Applications

* High power amplifier applications.

* High power switching applications.

* DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -220 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Volt

2SB552-INCHANGE.pdf