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2SB566 PNP Transistor

2SB566 Description

isc Silicon PNP Power Transistor 2SB566 .
Low Collector Saturation Voltage :VCE(sat)= -1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). Complement.

2SB566 Applications

* Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A

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Datasheet Details

Part number
2SB566
Manufacturer
INCHANGE
File Size
214.22 KB
Datasheet
2SB566-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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