2SB596
INCHANGE
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Pnp transistor. *Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) *Comple
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2SB595 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
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DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown V.
2SB595 - SILICON PNP TRANSISTOR
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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
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FEATURES
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POWER AMPLIFIER APPLICATIONS.
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(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
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A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
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2SB503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB506 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage-
: VCE(.
2SB506 - SILICON POWER TRANSISTOR
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DESCRIPTION ·With TO-3 package ·Wide area of.
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