2SB673 Datasheet - INCHANGE

2SB673, PNP Transistor

isc Silicon PNP Darlington Power Transistor 2SB673 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min). Low Collector Saturation.

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Datasheet Details

Part number:

2SB673

Manufacturer:

INCHANGE

File Size:

210.31 KB

Description:

PNP Transistor

Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Cont

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