2SB673 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB673 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min). Low Collector Saturation.

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Datasheet Specifications

Part number: 2SB673
Manufacturer: INCHANGE
File Size: 210.31 KB
Datasheet: 2SB673-INCHANGE.pdf
Description: PNP Transistor

Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Cont

2SB673 Distributors

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2SB673 PNP Transistor INCHANGE

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