2SB678 SILICON PNP TRANSISTOR

Toshiba

Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) 2SB678 LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.PUL.

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Datasheet Specifications

Part number: 2SB678
Manufacturer: Toshiba ↗
File Size: 42.10 KB
Datasheet: 2SB678-Toshiba.pdf
Description: SILICON PNP TRANSISTOR

Features

* :
* High DC Current Gain hFE ( 2 )=1000(Min. ) (V CE=-2V, I C=-1A) Low Saturation Voltage : VCE (sat)=-1.5V(Max. ) (I C=-1A) Complementary to 2SD688. jZfo.45 05.08 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu

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2SB678 SILICON PNP TRANSISTOR Toshiba

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