* :
* High DC Current Gain hFE ( 2 )=1000(Min.) (V CE=-2V, I C=-1A) Low Saturation Voltage : VCE (sat)=-1.5V(Max. ) (I C=-1A) Complementary to 2SD688. jZfo.45 05.08 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu
2SB678
42.10 KB
Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
2SB678
LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.
PUL.
📁 Related Datasheet
2SB673 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB673
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltag.
2SB673 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
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2SB674 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB674
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB674 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
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2SB675 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB675
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB675 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
