2SB677 Datasheet - INCHANGE

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2SB677 PNP Transistor

isc Silicon PNP Darlington Power Transistor 2SB677 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min). Low Collector-Emitter Satu.

2SB677-INCHANGE.pdf

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Datasheet Details

Part number:

2SB677

Manufacturer:

INCHANGE

File Size:

209.08 KB

Description:

PNP Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC

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2SB677 PNP Transistor INCHANGE

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