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2SB677 Datasheet - INCHANGE

2SB677 PNP Transistor

*High DC Current Gain- : hFE = 2000(Min)@ IC= -1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SB677-INCHANGE.pdf

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Datasheet Details

Part number:

2SB677

Manufacturer:

INCHANGE

File Size:

209.08 KB

Description:

Pnp transistor.

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