2SB677 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB677 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -40V(Min). Low Collector-Emitter Satu.

📥 Download Datasheet

2SB677 Datasheet Preview — Preview of 2SB677 PDF

Datasheet Specifications

Part number: 2SB677
Manufacturer: INCHANGE
File Size: 209.08 KB
Datasheet: 2SB677-INCHANGE.pdf
Description: PNP Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC

2SB677 Distributors

📁 Related Datasheet

2SB678 2SB679 2SB601 2SB605 2SB609 2SB616

📌 All Tags

2SB677 PNP Transistor INCHANGE

INCHANGE 2SB677-like datasheet