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2SB679 Datasheet - Toshiba

2SB679 SILICON PNP TRANSISTOR

2SB679 Features

* : ' High DC Current Gain : hFE(2 )=1000(Min. (V CE=-2V, I C=-1A)

* Low Saturation Voltage : VC E(sat)=-1.5V(Max. ) (Ic=-1A)

* Complementary to 2SD689. INDUSTRIAL APPLICATIONS Unit in mm 03.6 ± 0.2 MAXIMUM RATINGS (Ta = 25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter V

2SB679 Datasheet (44.47 KB)

Preview of 2SB679 PDF

Datasheet Details

Part number:

2SB679

Manufacturer:

Toshiba ↗

File Size:

44.47 KB

Description:

Silicon pnp transistor.

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2SB679 SILICON PNP TRANSISTOR Toshiba

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