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2SB676 Datasheet - INCHANGE

2SB676 PNP Transistor

*High DC Current Gain- : hFE = 2000(Min)@ IC= -1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A *Complement to Type 2SD686 *Minimum Lot-to-Lot variations for robust device performance and r.

2SB676-INCHANGE.pdf

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Datasheet Details

Part number:

2SB676

Manufacturer:

INCHANGE

File Size:

210.13 KB

Description:

Pnp transistor.

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