Datasheet Details
| Part number | 2SB676 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 210.13 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB676-INCHANGE.pdf
|
| Part number | 2SB676 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 210.13 KB |
| Description | PNP Transistor |
| Datasheet |
2SB676-INCHANGE.pdf
|
High DC Current Gain- : hFE = 2000(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications. Hammer drive, pulse motor drive applications. Power amplifier applications.
📁 2SB676 Similar Datasheet