2SB676 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min). Low Collector-Emitter Satu.

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Datasheet Specifications

Part number: 2SB676
Manufacturer: INCHANGE
File Size: 210.13 KB
Datasheet: 2SB676-INCHANGE.pdf
Description: PNP Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC

2SB676 Distributors

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2SB676 PNP Transistor INCHANGE

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