2SB676 Datasheet - INCHANGE

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2SB676 PNP Transistor

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= -1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min). Low Collector-Emitter Satu.

2SB676-INCHANGE.pdf

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Datasheet Details

Part number:

2SB676

Manufacturer:

INCHANGE

File Size:

210.13 KB

Description:

PNP Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC

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2SB676 PNP Transistor INCHANGE

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