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2SB675 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor 2SB675 .
High DC Current Gain : hFE= 2000(Min. Low Saturation Voltage : VCE(sat)= 1. Complement to Type 2SD635.

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Datasheet Specifications

Part number
2SB675
Manufacturer
INCHANGE
File Size
211.67 KB
Datasheet
2SB675-INCHANGE.pdf
Description
PNP Transistor

Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuou

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