2SB679 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB679 .
High Power Dissipation- : PC= 100W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Complement to Type 2SC1079.

📥 Download Datasheet

2SB679 Datasheet Preview — Preview of 2SB679 PDF

Datasheet Specifications

Part number: 2SB679
Manufacturer: INCHANGE
File Size: 194.76 KB
Datasheet: 2SB679-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Co

2SB679 Distributors

📁 Related Datasheet

2SB678 2SB600 2SB601 2SB605 2SB609 2SB616

📌 All Tags

2SB679 Silicon PNP Power Transistor INCHANGE

INCHANGE 2SB679-like datasheet