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2SB870 Datasheet - INCHANGE

2SB870 PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power switching appl.

2SB870-INCHANGE.pdf

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Datasheet Details

Part number:

2SB870

Manufacturer:

INCHANGE

File Size:

215.30 KB

Description:

Pnp transistor.

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