2SB870 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SB870 PNP Transistor

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= -0.

2SB870-INCHANGE.pdf

2SB870 Datasheet Preview — Preview of 2SB870 PDF

Datasheet Details

Part number:

2SB870

Manufacturer:

INCHANGE

File Size:

215.30 KB

Description:

PNP Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak

2SB870 Distributors

📁 Related Datasheet

2SB871 2SB871A 2SB872 2SB872A 2SB873 2SB874

📌 All Tags

2SB870 PNP Transistor INCHANGE

INCHANGE 2SB870-like datasheet