2SB870 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power switching appl
