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2SC3979 - NPN Transistor

2SC3979 Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min. Wide Area of Safe Operation. High Speed Switching. Minimum Lot-to-Lot varia.

2SC3979 Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

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Datasheet Details

Part number
2SC3979
Manufacturer
INCHANGE
File Size
208.06 KB
Datasheet
2SC3979-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3979-like datasheet