2SC3979 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min. Wide Area of Safe Operation. High Speed Switching. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SC3979
Manufacturer: INCHANGE
File Size: 208.06 KB
Datasheet: 2SC3979-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

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2SC3979 NPN Transistor INCHANGE

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