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2SC6011A - NPN Transistor

2SC6011A Description

isc Silicon NPN Power Transistor .
High Power Handling capacity. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min). Complement to Type 2SA2151A. Minimum L.

2SC6011A Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 6

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Datasheet Details

Part number
2SC6011A
Manufacturer
INCHANGE
File Size
211.59 KB
Datasheet
2SC6011A-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE 2SC6011A-like datasheet