2SC6011A Datasheet - INCHANGE

2SC6011A, NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION *High Power Handling capacity *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) <

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 6

2SC6011A-INCHANGE.pdf