Datasheet4U Logo Datasheet4U.com

2SD1175 NPN Transistor

2SD1175 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1175 .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 6. Built-in Damper Diod.

2SD1175 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Co

📥 Download Datasheet

Preview of 2SD1175 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1175
Manufacturer
INCHANGE
File Size
193.59 KB
Datasheet
2SD1175-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1170 - Power Transistor (Inchange Semiconductor)
  • 2SD1171 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD1172 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD1173 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD1174 - Si NPN Transistor (Panasonic Semiconductor)
  • 2SD110 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SD1101 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1105 - Silicon NPN Power Transistor (Inchange Semiconductor Company)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1175-like datasheet