2SD1175 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1175 .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 6. Built-in Damper Diod.

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Datasheet Specifications

Part number: 2SD1175
Manufacturer: INCHANGE
File Size: 193.59 KB
Datasheet: 2SD1175-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Co

2SD1175 Distributors

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2SD1175 NPN Transistor INCHANGE

INCHANGE 2SD1175-like datasheet