2SD1170 Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min. Low Collector Saturation Voltage. High DC Current Gain. 100% avalanche.

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Datasheet Specifications

Part number: 2SD1170
Manufacturer: Inchange Semiconductor
File Size: 196.27 KB
Datasheet: 2SD1170_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Driver for solenoid,motor and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 6 V 6 A ICM Collector Cur

2SD1170 Distributors

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2SD1170 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1170-like datasheet