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2SD1170 - Power Transistor

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2SD1170 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.) Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO IC Emitter-Base Voltage C

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