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2SD1172

Silicon NPN Transistor

2SD1172 General Description

*High Breakdown Voltage- : VCBO= 1500V (Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A *Built-in Damper Diode *Wide area of safe operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed .

2SD1172 Datasheet (234.30 KB)

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Datasheet Details

Part number:

2SD1172

Manufacturer:

Inchange Semiconductor

File Size:

234.30 KB

Description:

Silicon npn transistor.

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2SD1172 Silicon NPN Transistor Inchange Semiconductor

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