2SD1183 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1183 .
High Breakdown Voltage- : VCBO= 1200V (Min). High Reliability. Wide area of safe operation. Minimum Lot-to-Lot variations for robust.

📥 Download Datasheet

2SD1183 Datasheet Preview — Preview of 2SD1183 PDF

Datasheet Specifications

Part number: 2SD1183
Manufacturer: INCHANGE
File Size: 193.90 KB
Datasheet: 2SD1183-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current-Peak P

2SD1183 Distributors

📁 Related Datasheet

2SD1180 2SD1185 2SD1187 2SD1189 2SD110 2SD1101

📌 All Tags

2SD1183 NPN Transistor INCHANGE

INCHANGE 2SD1183-like datasheet