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2SD1184 - NPN Transistor

2SD1184 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1184 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Reliability. Wide area of safe operation. Minimum Lot-to-Lot variations for robust.

2SD1184 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current-Peak P

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Datasheet Details

Part number
2SD1184
Manufacturer
INCHANGE
File Size
193.91 KB
Datasheet
2SD1184-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1184-like datasheet