2SD1186 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Reliability. Minimum Lot-to-Lot variations for robust device performance and reliable o.

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Datasheet Specifications

Part number: 2SD1186
Manufacturer: INCHANGE
File Size: 198.78 KB
Datasheet: 2SD1186-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak P

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2SD1186 NPN Transistor INCHANGE

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