Datasheet4U Logo Datasheet4U.com

2SD1357

NPN Transistor

2SD1357 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A
*High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V
*Complement to Type 2SB997
*Minimum Lot-to-Lot variations for robust device performance and re.

2SD1357 Datasheet (168.58 KB)

Preview of 2SD1357 PDF

Datasheet Details

Part number:

2SD1357

Manufacturer:

INCHANGE

File Size:

168.58 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD1350 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.

2SD1350A - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.

2SD1351 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= .

2SD1351 - NPN Complementary Silicon Power Transistors (Thinki Semiconductor)
2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Operatio.

2SD1352 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB.

2SD1353 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1353 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic.

2SD1354 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1354 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=.

2SD1355 - Silicon NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Satura.

TAGS

2SD1357 NPN Transistor INCHANGE

Image Gallery

2SD1357 Datasheet Preview Page 2

2SD1357 Distributor