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2SD1360 NPN Transistor

2SD1360 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. High DC.

2SD1360 Applications

* High voltage switching applications
* Igniter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Curr

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Datasheet Details

Part number
2SD1360
Manufacturer
INCHANGE
File Size
187.21 KB
Datasheet
2SD1360-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1360-like datasheet