2SD1361
INCHANGE
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Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A *Hig
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2SD1360 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : h FE.
2SD1360 - NPN Transistor
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1360
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) .
2SD1361 - Silicon NPN Transistor
(Toshiba)
:
2SD1361
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current .
2SD1362 - Silicon NPN Transistor
(Toshiba)
:
2SD1362
m
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
POWER AMPLIFIER APPLICATIONS..
2SD1362 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1362
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SD1363 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN TRIPLE DIFFUSED TYPE
—
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Collector Current : Ic=7A . .
2SD1365 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1365
DESCRIPTION ·High Collector-Base Voltage
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2SD1366 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD1366
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange.
2SD1366A - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD1366A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flang.
2SD1367 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD1367
Silicon NPN Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SB1001
Outline
UPAK
1 3 2
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1. Base 2. Colle.