2SD1361 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1361 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. High DC.

📥 Download Datasheet

2SD1361 Datasheet Preview — Preview of 2SD1361 PDF

Datasheet Specifications

Part number: 2SD1361
Manufacturer: INCHANGE
File Size: 184.89 KB
Datasheet: 2SD1361-INCHANGE.pdf
Description: NPN Transistor

Applications

* High voltage switching applications
* Igniter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Curr

2SD1361 Distributors

📁 Related Datasheet

2SD1360 2SD1362 2SD1363 2SD1366 2SD1366A 2SD1367

📌 All Tags

2SD1361 NPN Transistor INCHANGE

INCHANGE 2SD1361-like datasheet