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2SD1377 NPN Transistor

2SD1377 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1377 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 4A. Low Saturation Voltage. 10.

2SD1377 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A

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Datasheet Details

Part number
2SD1377
Manufacturer
INCHANGE
File Size
196.18 KB
Datasheet
2SD1377-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1377-like datasheet