2SD1377 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1377 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 4A. Low Saturation Voltage. 10.

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Datasheet Specifications

Part number: 2SD1377
Manufacturer: INCHANGE
File Size: 196.18 KB
Datasheet: 2SD1377-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A

2SD1377 Distributors

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2SD1377 NPN Transistor INCHANGE

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