Datasheet4U Logo Datasheet4U.com

2SD1410 Silicon NPN Darlington Power Transistor

2SD1410 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min). Collector-Emitter Saturation Voltage- :V CE(sat)= 2. High D.

2SD1410 Applications

* Igniter applications
* High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Curr

📥 Download Datasheet

Preview of 2SD1410 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1410
Manufacturer
INCHANGE
File Size
212.80 KB
Datasheet
2SD1410-INCHANGE.pdf
Description
Silicon NPN Darlington Power Transistor

📁 Related Datasheet

  • 2SD1410A - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1411 - NPN Transistor (Toshiba)
  • 2SD1411A - NPN Transistor (Toshiba Semiconductor)
  • 2SD1412 - NPN Transistor (Toshiba)
  • 2SD1412A - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1415A - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1418 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1419 - Silicon NPN Transistor (Hitachi Semiconductor)

📌 All Tags

INCHANGE 2SD1410-like datasheet