2SD1410 Silicon NPN Darlington Power Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min). Collector-Emitter Saturation Voltage- :V CE(sat)= 2. High D.

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Datasheet Specifications

Part number: 2SD1410
Manufacturer: INCHANGE
File Size: 212.80 KB
Datasheet: 2SD1410-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Igniter applications
* High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Curr

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2SD1410 Silicon NPN Darlington Power Transistor INCHANGE

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