2SD1415A NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD1415A .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

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Datasheet Specifications

Part number: 2SD1415A
Manufacturer: INCHANGE
File Size: 205.31 KB
Datasheet: 2SD1415A-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power switching applications
* Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuo

2SD1415A Distributors

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2SD1415A NPN Transistor INCHANGE

INCHANGE 2SD1415A-like datasheet