2SD1680 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min). High Power Dissipation. High Speed Switching. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: 2SD1680
Manufacturer: INCHANGE
File Size: 204.88 KB
Datasheet: 2SD1680-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCES Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

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2SD1680 NPN Transistor INCHANGE

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