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2SD2384 NPN Transistor

2SD2384 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High DC Current Gain- : hFE= 5000(Min)@IC= 6A. Complement to Type 2SB1555.

2SD2384 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC

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Datasheet Details

Part number
2SD2384
Manufacturer
INCHANGE
File Size
200.64 KB
Datasheet
2SD2384-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2384-like datasheet