2SD2384 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High DC Current Gain- : hFE= 5000(Min)@IC= 6A. Complement to Type 2SB1555.

📥 Download Datasheet

2SD2384 Datasheet Preview — Preview of 2SD2384 PDF

Datasheet Specifications

Part number: 2SD2384
Manufacturer: INCHANGE
File Size: 200.64 KB
Datasheet: 2SD2384-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC

2SD2384 Distributors

📁 Related Datasheet

2SD2382 2SD2383 2SD2385 2SD2386 2SD2387 2SD2389

📌 All Tags

2SD2384 NPN Transistor INCHANGE

INCHANGE 2SD2384-like datasheet