2SD2385 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High DC Current Gain- : hFE= 5000(Min)@IC= 7A. Complement to Type 2SB1556.

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Datasheet Specifications

Part number: 2SD2385
Manufacturer: INCHANGE
File Size: 200.61 KB
Datasheet: 2SD2385-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC

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2SD2385 NPN Transistor INCHANGE

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