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2SD2385 NPN Transistor

2SD2385 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High DC Current Gain- : hFE= 5000(Min)@IC= 7A. Complement to Type 2SB1556.

2SD2385 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC

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Datasheet Details

Part number
2SD2385
Manufacturer
INCHANGE
File Size
200.61 KB
Datasheet
2SD2385-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2385-like datasheet