2SD2398 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2398 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 1A. Low Collector Saturation Voltgae.

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Datasheet Specifications

Part number: 2SD2398
Manufacturer: INCHANGE
File Size: 181.07 KB
Datasheet: 2SD2398-INCHANGE.pdf
Description: NPN Transistor

Applications

* Motor，Relay drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation

2SD2398 Distributors

📁 Related Datasheet

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2SD2398 NPN Transistor INCHANGE

INCHANGE 2SD2398-like datasheet