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2SD2399 NPN Transistor

2SD2399 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

2SD2399 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Curre

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Datasheet Details

Part number
2SD2399
Manufacturer
INCHANGE
File Size
192.39 KB
Datasheet
2SD2399-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2399-like datasheet