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2SD381 NPN Transistor

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Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min. Complement to Type 2SB536. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number
2SD381
Manufacturer
INCHANGE
File Size
209.76 KB
Datasheet
2SD381-INCHANGE.pdf
Description
NPN Transistor

Applications

* Audio frequency power amplifier, low speed switching.
* Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC

2SD381 Distributors

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NPN Transistor INCHANGE
INCHANGE 2SD381-like datasheet