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2SD386 NPN Transistor

2SD386 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Mi.

2SD386 Applications

* Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Cur

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Datasheet Details

Part number
2SD386
Manufacturer
INCHANGE
File Size
208.54 KB
Datasheet
2SD386-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD386-like datasheet