2SD386 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Mi.

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Datasheet Specifications

Part number: 2SD386
Manufacturer: INCHANGE
File Size: 208.54 KB
Datasheet: 2SD386-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Cur

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2SD386 NPN Transistor INCHANGE

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